STD10N60M2 MOSFET Datasheet & Specifications
N-Channel
DPAK
High-Voltage
ST
Vds Max
600V
Id Max
7.5A
Rds(on)
600mΩ@10V
Vgs(th)
4V
Quick Reference
The STD10N60M2 is an N-Channel MOSFET in a DPAK package, manufactured by ST. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 7.5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 600V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7.5A | Max current handling |
| Power Dissipation (Pd) | 85W | Max thermal limit |
| On-Resistance (Rds(on)) | 600mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 13.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 400pF | Internal gate capacitance |
| Output Capacitance (Coss) | 22pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |