SQ4532AEY-T1_BE3 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOIC-8
Logic-Level
VISHAY
Vds Max
30V
Id Max
7.3A
Rds(on)
31mΩ@10V
Vgs(th)
2.5V
Quick Reference
The SQ4532AEY-T1_BE3 is a Dual N/P-Channel in a SOIC-8 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 7.3A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7.3A | Max current handling |
| Power Dissipation (Pd) | 3.3W | Max thermal limit |
| On-Resistance (Rds(on)) | 31mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 7.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 535pF | Internal gate capacitance |
| Output Capacitance (Coss) | 123pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| AO4616 | Dual N/P-Channel | SOIC-8 | 30V | 40A | 40mΩ@4.5V | 2.5V | AOS 📄 PDF |
| AO4629 | Dual N/P-Channel | SOIC-8 | 30V | 30A | 41mΩ@10V | 2.5V | AOS 📄 PDF |
| DMC3032LSD-13 | Dual N/P-Channel | SOIC-8 | 30V | 8.1A | 53mΩ@4.5V | 2.2V | DIODES 📄 PDF |
| AO4611 | Dual N/P-Channel | SOIC-8 | 60V | 40A | 52mΩ@4.5V | 3V | AOS 📄 PDF |
| AO4612 | Dual N/P-Channel | SOIC-8 | 60V | 20A | 77mΩ@4.5V | 1V | AOS 📄 PDF |