AO4629 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel SOIC-8 Logic-Level AOS
Vds Max
30V
Id Max
30A
Rds(on)
41mΩ@10V
Vgs(th)
2.5V

Quick Reference

The AO4629 is a Dual N/P-Channel in a SOIC-8 package, manufactured by AOS. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 30A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerAOSOriginal Manufacturer
PackageSOIC-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)30AMax current handling
Power Dissipation (Pd)-Max thermal limit
On-Resistance (Rds(on))41mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)11nC@10VSwitching energy
Input Capacitance (Ciss)520pFInternal gate capacitance
Output Capacitance (Coss)100pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
AO4616 Dual N/P-Channel SOIC-8 30V 40A 40mΩ@4.5V 2.5V
AO4611 Dual N/P-Channel SOIC-8 60V 40A 52mΩ@4.5V 3V