DMC3032LSD-13 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOIC-8
Logic-Level
DIODES
Vds Max
30V
Id Max
8.1A
Rds(on)
53mΩ@4.5V
Vgs(th)
2.2V
Quick Reference
The DMC3032LSD-13 is a Dual N/P-Channel in a SOIC-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 8.1A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8.1A | Max current handling |
| Power Dissipation (Pd) | 2.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 53mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.2V | Voltage required to turn on |
| Gate Charge (Qg) | 21.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.002nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |