SI6968BEDQ-T1-GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
TSSOP-8
Logic-Level
VISHAY
Vds Max
20V
Id Max
6.5A
Rds(on)
22mΩ@4.5V
Vgs(th)
1.6V
Quick Reference
The SI6968BEDQ-T1-GE3 is a N-Channel Array in a TSSOP-8 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 6.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | TSSOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6.5A | Max current handling |
| Power Dissipation (Pd) | 1.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 22mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 12nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| AO8808A | N-Channel Array | TSSOP-8 | 20V | 7.9A | 14mΩ@10V | 1V | AOS 📄 PDF |
| AO8814 | N-Channel Array | TSSOP-8 | 20V | 7.5A | 16mΩ@10V | 1V | AOS 📄 PDF |
| DMN2016UTS-13 | N-Channel Array | TSSOP-8 | 20V | 8.58A | 16.5mΩ@4.5V | 1V | DIODES 📄 PDF |
| AO8820 | N-Channel Array | TSSOP-8 | 20V | 30A | 21mΩ@10V | 1.1V | AOS 📄 PDF |
| FDW2509NZ | N-Channel Array | TSSOP-8 | 20V | 7.1A | 26mΩ@2.5V | 1.5V | onsemi 📄 PDF |
| TSM6968SDCA | N-Channel Array | TSSOP-8 | 20V | 6.5A | 29mΩ@2.5V | 1V | Taiwan Semico... 📄 PDF |
| TSM6968DCA | N-Channel Array | TSSOP-8 | 20V | 6.5A | 29mΩ@2.5V | 1V | Taiwan Semico... 📄 PDF |