FDW2509NZ MOSFET Array Datasheet & Equivalents

N-Channel Array TSSOP-8 Logic-Level onsemi
Vds Max
20V
Id Max
7.1A
Rds(on)
26mΩ@2.5V
Vgs(th)
1.5V

Quick Reference

The FDW2509NZ is a N-Channel Array in a TSSOP-8 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 7.1A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTSSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)7.1AMax current handling
Power Dissipation (Pd)30WMax thermal limit
On-Resistance (Rds(on))26mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)19nC@4.5VSwitching energy
Input Capacitance (Ciss)1.263nFInternal gate capacitance
Output Capacitance (Coss)327pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
AO8808A N-Channel Array TSSOP-8 20V 7.9A 14mΩ@10V 1V
AO8814 N-Channel Array TSSOP-8 20V 7.5A 16mΩ@10V 1V
DMN2016UTS-13 N-Channel Array TSSOP-8 20V 8.58A 16.5mΩ@4.5V 1V
DIODES 📄 PDF
AO8820 N-Channel Array TSSOP-8 20V 30A 21mΩ@10V 1.1V