DMN2016UTS-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
TSSOP-8
Logic-Level
DIODES
Vds Max
20V
Id Max
8.58A
Rds(on)
16.5mΩ@4.5V
Vgs(th)
1V
Quick Reference
The DMN2016UTS-13 is a N-Channel Array in a TSSOP-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 8.58A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TSSOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8.58A | Max current handling |
| Power Dissipation (Pd) | 880mW | Max thermal limit |
| On-Resistance (Rds(on)) | 16.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 16.5nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.495nF | Internal gate capacitance |
| Output Capacitance (Coss) | 161pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |