SE100150G MOSFET Datasheet & Specifications

N-Channel TO-263 High-Current SINO-IC
Vds Max
100V
Id Max
150A
Rds(on)
3.81mΩ@10V
Vgs(th)
4V

Quick Reference

The SE100150G is an N-Channel MOSFET in a TO-263 package, manufactured by SINO-IC. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSINO-ICOriginal Manufacturer
PackageTO-263Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)300WMax thermal limit
On-Resistance (Rds(on))3.81mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)160nC@10VSwitching energy
Input Capacitance (Ciss)6.1nFInternal gate capacitance
Output Capacitance (Coss)480pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

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