SP010N03BGHTD MOSFET Datasheet & Specifications
N-Channel
TO-263
Logic-Level
Siliup
Vds Max
100V
Id Max
170A
Rds(on)
3.2mΩ@10V
Vgs(th)
2.7V
Quick Reference
The SP010N03BGHTD is an N-Channel MOSFET in a TO-263 package, manufactured by Siliup. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 170A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Siliup | Original Manufacturer |
| Package | TO-263 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 170A | Max current handling |
| Power Dissipation (Pd) | 205W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.2mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.7V | Voltage required to turn on |
| Gate Charge (Qg) | 90nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.396nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.361nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP010N02BGHTD | N-Channel | TO-263 | 100V | 220A | 2.1mΩ@10V | 3.2V | Siliup 📄 PDF |
| SFB030N100C3 | N-Channel | TO-263 | 100V | 260A | 2.5mΩ@10V | 3V | SCILICON 📄 PDF |
| XRS180N15G | N-Channel | TO-263 | 150V | 180A | 4mΩ@10V | 3V | XNRUSEMI 📄 PDF |