XRS180N15G MOSFET Datasheet & Specifications

N-Channel TO-263 Logic-Level XNRUSEMI
Vds Max
150V
Id Max
180A
Rds(on)
4mΩ@10V
Vgs(th)
3V

Quick Reference

The XRS180N15G is an N-Channel MOSFET in a TO-263 package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 150V and a continuous drain current of 180A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerXNRUSEMIOriginal Manufacturer
PackageTO-263Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)150VMax breakdown voltage
Continuous Drain Current (Id)180AMax current handling
Power Dissipation (Pd)338WMax thermal limit
On-Resistance (Rds(on))4mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)19.9nC@10VSwitching energy
Input Capacitance (Ciss)4.93nFInternal gate capacitance
Output Capacitance (Coss)722pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.