S8050T Datasheet & Equivalents

NPN SOT-523 General Purpose GOODWORK
VCEO
25V
Ic Max
500mA
Pd Max
200mW
hFE Gain
-

Quick Reference

The S8050T is a NPN bipolar junction transistor in a SOT-523 package, manufactured by GOODWORK. It supports a breakdown voltage of 25V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)-Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)600mV@500mA,50mAVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒ@(Tj)Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
S8050 NPN SOT-523 25V 500mA 120 200mW
MMBT2222ATT1G NPN SOT-523 40V 600mA 35 150mW
MMBT2222AT NPN SOT-523 40V 600mA 35 150mW
MMBT2222AT-7-F NPN SOT-523 40V 600mA 75 150mW
MMBT2222AT NPN SOT-523 40V 600mA 75 150mW
MMBT4401T-7-F NPN SOT-523 40V 600mA 80 150mW
MMBT2222AT-JSM NPN SOT-523 40V 600mA 300 150mW
MMBT2222AT NPN SOT-523 40V 600mA 300 150mW