S8050 Datasheet & Equivalents

NPN SOT-523 General Purpose CBI
VCEO
25V
Ic Max
500mA
Pd Max
200mW
hFE Gain
120
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Quick Reference

The S8050 is a NPN bipolar junction transistor in a SOT-523 package, manufactured by CBI. It supports a breakdown voltage of 25V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerCBIOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)600mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
S8050T NPN SOT-523 25V 500mA 50 265mW
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S8050T NPN SOT-523 25V 500mA - 200mW
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S8050T NPN SOT-523 25V 500mA 350 300mW
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MMBT4401T-7-F NPN SOT-523 40V 600mA 80 150mW
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MMBT2222AT-7-F NPN SOT-523 40V 600mA 75 150mW
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MMBT2222AT NPN SOT-523 40V 600mA 75 150mW
YANGJIE 📄 PDF
MMBT2222ATT1G NPN SOT-523 40V 600mA 35 150mW
onsemi 📄 PDF
MMBT2222AT NPN SOT-523 40V 600mA 35 150mW
JSCJ 📄 PDF
MMBT2222AT-JSM NPN SOT-523 40V 600mA 300 150mW
JSMSEMI 📄 PDF
MMBT2222AT NPN SOT-523 40V 600mA 300 150mW
Shikues 📄 PDF
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