MMBT2222ATT1G Datasheet & Equivalents
NPN
SOT-523
General Purpose
onsemi
VCEO
40V
Ic Max
600mA
Pd Max
150mW
hFE Gain
35
Quick Reference
The MMBT2222ATT1G is a NPN bipolar junction transistor in a SOT-523 package, manufactured by onsemi. It supports a breakdown voltage of 40V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 600mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| DC Current Gain (hFE) | 35 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMBT2222AT | NPN | SOT-523 | 40V | 600mA | 35 | 150mW | JSCJ 📄 PDF |
| MMBT2222AT-7-F | NPN | SOT-523 | 40V | 600mA | 75 | 150mW | DIODES 📄 PDF |
| MMBT2222AT | NPN | SOT-523 | 40V | 600mA | 75 | 150mW | YANGJIE 📄 PDF |
| MMBT4401T-7-F | NPN | SOT-523 | 40V | 600mA | 80 | 150mW | DIODES 📄 PDF |
| MMBT2222AT-JSM | NPN | SOT-523 | 40V | 600mA | 300 | 150mW | JSMSEMI 📄 PDF |
| MMBT2222AT | NPN | SOT-523 | 40V | 600mA | 300 | 150mW | Shikues 📄 PDF |