RUM002N02T2L MOSFET Datasheet & Specifications

N-Channel SOT-723 Logic-Level ROHM
Vds Max
20V
Id Max
200mA
Rds(on)
2.4Ī©@1.5V
Vgs(th)
1V

Quick Reference

The RUM002N02T2L is an N-Channel MOSFET in a SOT-723 package, manufactured by ROHM. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 200mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-723Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)200mAMax current handling
Power Dissipation (Pd)150mWMax thermal limit
On-Resistance (Rds(on))2.4Ī©@1.5VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)25pFInternal gate capacitance
Output Capacitance (Coss)10pFInternal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SP2002KT7 N-Channel SOT-723 20V 750mA 250mΩ@4.5V
350mΩ@2.5V
650mV
SI3134KA-TP N-Channel SOT-723 20V 750mA 300mΩ@4.5V 1.1V
KM3134K N-Channel SOT-723 20V 750mA 330mΩ@4.5V 1.1V
CJ3134K KF N-Channel SOT-723 20V 750mA 380mΩ@4.5V 1.1V
RUM001L02-TP N-Channel SOT-723 20V 950mA 480mΩ@1.8V 1V
TECH PUBLIC šŸ“„ PDF
WNM2030 N-Channel SOT-723 20V 950mA 480mΩ@1.8V 1V
TECH PUBLIC šŸ“„ PDF
YJL3134KAT N-Channel SOT-723 20V 500mA 700mΩ@1.8V 1.1V
YANGJIE šŸ“„ PDF
SSM3K56MFV N-Channel SOT-723 20V 800mA 840mΩ@1.5V 1V
TOSHIBA šŸ“„ PDF
L3F N-Channel SOT-723 20V 285mA 6.8Ī©@1.65V 1.3V
NTK3043NT1G N-Channel SOT-723 30V 300mA 8Ī©@2.5V 1.45V
MC3541A-TP N-Channel SOT-723 60V 300mA 1.8Ī©@10V
2Ī©@4.5V
1.1V
ElecSuper šŸ“„ PDF