SP2002KT7 MOSFET Datasheet & Specifications

N-Channel SOT-723 Logic-Level Siliup
Vds Max
20V
Id Max
750mA
Rds(on)
250mΩ@4.5V;350mΩ@2.5V
Vgs(th)
650mV

Quick Reference

The SP2002KT7 is an N-Channel MOSFET in a SOT-723 package, manufactured by Siliup. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 750mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSiliupOriginal Manufacturer
PackageSOT-723Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)750mAMax current handling
Power Dissipation (Pd)150mWMax thermal limit
On-Resistance (Rds(on))250mΩ@4.5V;350mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))650mVVoltage required to turn on
Gate Charge (Qg)800pC@4.5VSwitching energy
Input Capacitance (Ciss)35pFInternal gate capacitance
Output Capacitance (Coss)19pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI3134KA-TP N-Channel SOT-723 20V 750mA 300mΩ@4.5V 1.1V
KM3134K N-Channel SOT-723 20V 750mA 330mΩ@4.5V 1.1V
CJ3134K KF N-Channel SOT-723 20V 750mA 380mΩ@4.5V 1.1V
RUM001L02-TP N-Channel SOT-723 20V 950mA 480mΩ@1.8V 1V
TECH PUBLIC 📄 PDF
WNM2030 N-Channel SOT-723 20V 950mA 480mΩ@1.8V 1V
TECH PUBLIC 📄 PDF
SSM3K56MFV N-Channel SOT-723 20V 800mA 840mΩ@1.5V 1V
TOSHIBA 📄 PDF