RUM001L02-TP MOSFET Datasheet & Specifications
N-Channel
SOT-723
Logic-Level
TECH PUBLIC
Vds Max
20V
Id Max
950mA
Rds(on)
480mΩ@1.8V
Vgs(th)
1V
Quick Reference
The RUM001L02-TP is an N-Channel MOSFET in a SOT-723 package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 950mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-723 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 950mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| On-Resistance (Rds(on)) | 480mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 1.15nC | Switching energy |
| Input Capacitance (Ciss) | 50pF | Internal gate capacitance |
| Output Capacitance (Coss) | 13pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |