RF1K4909396 MOSFET Array Datasheet & Equivalents (TI, -)

P-Channel Array - Logic-Level TI
Vds Max
12V
Id Max
2.5A
Rds(on)
130mΩ@5V
Vgs(th)
2V

Quick Reference

The RF1K4909396 is a P-Channel Array in a - package, manufactured by TI. Each channel supports a drain-source breakdown voltage of 12V and a continuous drain current of 2.5A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTIOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)12VMax breakdown voltage
Continuous Drain Current (Id)2.5AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))130mΩ@5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)24nC@10VSwitching energy
Input Capacitance (Ciss)775pFInternal gate capacitance
Output Capacitance (Coss)550pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMP2101UCP9-7 P-Channel Array - 20V 3.1A 63mΩ@4.5V 740mV
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HAT1126RWS-E P-Channel Array - 60V 6A 50mΩ@10V 2.5V
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SQJ963EP-T1_GE3 P-Channel Array - 60V 8A 115mΩ@4.5V 2.5V
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2SJ172-E P-Channel Array - 60V 10A 250mΩ@4V 2V
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