HAT1126RWS-E MOSFET Array Datasheet & Equivalents
P-Channel Array
-
Logic-Level
RENESAS
Vds Max
60V
Id Max
6A
Rds(on)
50mΩ@10V
Vgs(th)
2.5V
Quick Reference
The HAT1126RWS-E is a P-Channel Array in a - package, manufactured by RENESAS. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 6A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | RENESAS | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6A | Max current handling |
| Power Dissipation (Pd) | 3W | Max thermal limit |
| On-Resistance (Rds(on)) | 50mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 37nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.3nF | Internal gate capacitance |
| Output Capacitance (Coss) | 230pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SQJ963EP-T1_GE3 | P-Channel Array | - | 60V | 8A | 115mΩ@4.5V | 2.5V | VISHAY 📄 PDF |
| 2SJ172-E | P-Channel Array | - | 60V | 10A | 250mΩ@4V | 2V | RENESAS 📄 PDF |