SQJ963EP-T1_GE3 MOSFET Array Datasheet & Equivalents
P-Channel Array
-
Logic-Level
VISHAY
Vds Max
60V
Id Max
8A
Rds(on)
115mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SQJ963EP-T1_GE3 is a P-Channel Array in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 8A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8A | Max current handling |
| Power Dissipation (Pd) | 27W | Max thermal limit |
| On-Resistance (Rds(on)) | 115mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 40nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.14nF | Internal gate capacitance |
| Output Capacitance (Coss) | 125pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |