PTQ15C03 MOSFET Datasheet & Specifications
P-Channel
PDFN-8(3.3x3.3)
Logic-Level
HT(Shenzhen Jinyu Semicon)
Vds Max
30V
Id Max
15A;11A
Rds(on)
16mΩ@10V;25mΩ@10V
Vgs(th)
1.5V
Quick Reference
The PTQ15C03 is an P-Channel MOSFET in a PDFN-8(3.3x3.3) package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 30V and a continuous drain current of 15A;11A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | PDFN-8(3.3x3.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 15A;11A | Max current handling |
| Power Dissipation (Pd) | 15W | Max thermal limit |
| On-Resistance (Rds(on)) | 16mΩ@10V;25mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 15nC@10V;52nC@10V | Switching energy |
| Input Capacitance (Ciss) | 584pF;1.2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 112pF;155pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NCE30P28Q | P-Channel | PDFN-8(3.3x3.3) | 30V | 28A | 6.7mΩ@10V | 1.7V | NCE 📄 PDF |
| AGM30P08AP | P-Channel | PDFN-8(3.3x3.3) | 30V | 60A | 7.2mΩ@10V 11.5mΩ@4.5V |
1.7V | AGMSEMI 📄 PDF |
| AGM418MAP | P-Channel | PDFN-8(3.3x3.3) | 40V | 18A | 18mΩ@10V 20mΩ@10V |
1.6V;1.5V | AGMSEMI 📄 PDF |
| AGM628MAP | P-Channel | PDFN-8(3.3x3.3) | 60V | 21A | 30mΩ@10V 44mΩ@10V |
1.5V;1.7V | AGMSEMI 📄 PDF |