AGM418MAP MOSFET Datasheet & Specifications
P-Channel
PDFN-8(3.3x3.3)
Logic-Level
AGMSEMI
Vds Max
40V
Id Max
18A
Rds(on)
18mΩ@10V;20mΩ@10V
Vgs(th)
1.6V;1.5V
Quick Reference
The AGM418MAP is an P-Channel MOSFET in a PDFN-8(3.3x3.3) package, manufactured by AGMSEMI. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 18A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | AGMSEMI | Original Manufacturer |
| Package | PDFN-8(3.3x3.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 18A | Max current handling |
| Power Dissipation (Pd) | 25W | Max thermal limit |
| On-Resistance (Rds(on)) | 18mΩ@10V;20mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V;1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 8.9nC@10V;20nC@10V | Switching energy |
| Input Capacitance (Ciss) | 616pF;1.572nF | Internal gate capacitance |
| Output Capacitance (Coss) | 82pF;115pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |