NCE30P28Q MOSFET Datasheet & Specifications
P-Channel
PDFN-8(3.3x3.3)
Logic-Level
NCE
Vds Max
30V
Id Max
28A
Rds(on)
6.7mΩ@10V
Vgs(th)
1.7V
Quick Reference
The NCE30P28Q is an P-Channel MOSFET in a PDFN-8(3.3x3.3) package, manufactured by NCE. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 28A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | NCE | Original Manufacturer |
| Package | PDFN-8(3.3x3.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 28A | Max current handling |
| Power Dissipation (Pd) | 40W | Max thermal limit |
| On-Resistance (Rds(on)) | 6.7mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.7V | Voltage required to turn on |
| Gate Charge (Qg) | 30nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.06nF | Internal gate capacitance |
| Output Capacitance (Coss) | 370pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| AGM30P08AP | P-Channel | PDFN-8(3.3x3.3) | 30V | 60A | 7.2mΩ@10V 11.5mΩ@4.5V |
1.7V | AGMSEMI 📄 PDF |
| PTQ40P40 | P-Channel | PDFN-8(3.3x3.3) | 40V | 40A | 10.4mΩ@10V 13.5mΩ@4.5V |
2.1V | HT(Shenzhen J... 📄 PDF |