PJX8872B_R1_00001 MOSFET Array Datasheet & Equivalents

N-Channel Array SOT-563 Logic-Level PANJIT
Vds Max
60V
Id Max
200mA
Rds(on)
3ฮฉ@10V
Vgs(th)
2.5V

Quick Reference

The PJX8872B_R1_00001 is a N-Channel Array in a SOT-563 package, manufactured by PANJIT. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 200mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerPANJITOriginal Manufacturer
PackageSOT-563Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)200mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
On-Resistance (Rds(on))3ฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)820pC@4.5VSwitching energy
Input Capacitance (Ciss)34pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMN601VKQ-7 N-Channel Array SOT-563 60V 305mA 1.3ฮฉ@10V 1.6V
DMG1026UVQ-7 N-Channel Array SOT-563 60V 440mA 1.8ฮฉ@10V 1.8V
NTZD5110NT1G N-Channel Array SOT-563 60V 310mA 2.5ฮฉ@4.5V 2.5V
DMN62D0UV-13 N-Channel Array SOT-563 60V 490mA 2.5ฮฉ@2.5V 1V
DMN601VK-7 N-Channel Array SOT-563 60V 305mA 3ฮฉ@4.5V 2.5V
DMN63D1LV-13 N-Channel Array SOT-563 60V 550mA 3ฮฉ@5V 2.5V
CMLDM7002AJ TR PBFREE N-Channel Array SOT-563 60V 280mA 5ฮฉ@5V 2.5V
2N7002KV-TP N-Channel Array SOT-563 60V 340mA 5ฮฉ@10V 2.5V
2N7002VC-7 N-Channel Array SOT-563 60V 280mA 7.5ฮฉ@10V 2.5V