DMN601VKQ-7 MOSFET Array Datasheet & Equivalents

N-Channel Array SOT-563 Logic-Level DIODES
Vds Max
60V
Id Max
305mA
Rds(on)
1.3Ω@10V
Vgs(th)
1.6V

Quick Reference

The DMN601VKQ-7 is a N-Channel Array in a SOT-563 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 305mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-563Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)305mAMax current handling
Power Dissipation (Pd)250mWMax thermal limit
On-Resistance (Rds(on))1.3Ω@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.6VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)50pFInternal gate capacitance
Output Capacitance (Coss)25pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMG1026UVQ-7 N-Channel Array SOT-563 60V 440mA 1.8Ω@10V 1.8V
DIODES 📄 PDF
DMN62D0UV-13 N-Channel Array SOT-563 60V 490mA 2.5Ω@2.5V 1V
DIODES 📄 PDF