NTZD5110NT1G MOSFET Array Datasheet & Equivalents
N-Channel Array
SOT-563
Logic-Level
onsemi
Vds Max
60V
Id Max
310mA
Rds(on)
2.5ฮฉ@4.5V
Vgs(th)
2.5V
Quick Reference
The NTZD5110NT1G is a N-Channel Array in a SOT-563 package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 310mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-563 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 310mA | Max current handling |
| Power Dissipation (Pd) | 280mW | Max thermal limit |
| On-Resistance (Rds(on)) | 2.5ฮฉ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 700pC@10V | Switching energy |
| Input Capacitance (Ciss) | 24.5pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMG1026UVQ-7 | N-Channel Array | SOT-563 | 60V | 440mA | 1.8ฮฉ@10V | 1.8V | DIODES ๐ PDF |
| DMN62D0UV-13 | N-Channel Array | SOT-563 | 60V | 490mA | 2.5ฮฉ@2.5V | 1V | DIODES ๐ PDF |
| DMN63D1LV-13 | N-Channel Array | SOT-563 | 60V | 550mA | 3ฮฉ@5V | 2.5V | DIODES ๐ PDF |
| 2N7002KV-TP | N-Channel Array | SOT-563 | 60V | 340mA | 5ฮฉ@10V | 2.5V | MCC ๐ PDF |