NTR4101PT1G MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level onsemi
Vds Max
20V
Id Max
3.2A
Rds(on)
210mΩ@1.8V
Vgs(th)
1.2V

Quick Reference

The NTR4101PT1G is an P-Channel MOSFET in a SOT-23 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 3.2A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)3.2AMax current handling
Power Dissipation (Pd)730mWMax thermal limit
On-Resistance (Rds(on))210mΩ@1.8VResistance when turned fully on
Gate Threshold (Vgs(th))1.2VVoltage required to turn on
Gate Charge (Qg)8.5nC@4.5VSwitching energy
Input Capacitance (Ciss)675pFInternal gate capacitance
Output Capacitance (Coss)100pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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