Si2323DDS-T1-GE3 MOSFET Datasheet & Specifications
P-Channel
SOT-23
Logic-Level
VISHAY
Vds Max
20V
Id Max
5.3A
Rds(on)
75mΩ@1.8V
Vgs(th)
1V
Quick Reference
The Si2323DDS-T1-GE3 is an P-Channel MOSFET in a SOT-23 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 5.3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.3A | Max current handling |
| Power Dissipation (Pd) | 1.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 75mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 21nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.16nF | Internal gate capacitance |
| Output Capacitance (Coss) | 135pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| WST2339 | P-Channel | SOT-23 | 20V | 7.1A | 19mΩ@4.5V | 1V | Winsok Semicon 📄 PDF |
| HL3415A | P-Channel | SOT-23 | 20V | 5.6A | 31mΩ@4.5V 41mΩ@2.5V |
620mV | R+O 📄 PDF |
| SI2305M-6AF | P-Channel | SOT-23 | 20V | 5.5A | 75mΩ@1.8V | 1V | FOSAN 📄 PDF |
| SI2393DS-T1-GE3 | P-Channel | SOT-23 | 30V | 7.5A | 22.7mΩ@10V | 1V | VISHAY 📄 PDF |