CJ3415 MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level JSCJ
Vds Max
20V
Id Max
4A
Rds(on)
100mΩ@1.8V
Vgs(th)
1V

Quick Reference

The CJ3415 is an P-Channel MOSFET in a SOT-23 package, manufactured by JSCJ. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)4AMax current handling
Power Dissipation (Pd)1.3WMax thermal limit
On-Resistance (Rds(on))100mΩ@1.8VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)17.2nC@4.5VSwitching energy
Input Capacitance (Ciss)1.45nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
WST2339 P-Channel SOT-23 20V 7.1A 19mΩ@4.5V 1V
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DMG2305UX-13 P-Channel SOT-23 20V 5A 40mΩ@4.5V
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SI2305M-6AF P-Channel SOT-23 20V 5.5A 75mΩ@1.8V 1V
FOSAN 📄 PDF
SI2333DS-L P-Channel SOT-23 20V 4.2A 80mΩ@2.5V 900mV
PIELENST 📄 PDF
KSI2305CDS-T1-GE3 P-Channel SOT-23 20V 4A 85mΩ@2.5V 1V
IRLML2244TRPBF P-Channel SOT-23 20V 4.3A 95mΩ@2.5V 1.1V
Infineon 📄 PDF
SI2377EDS-T1-GE3 P-Channel SOT-23 20V 4.4A 165mΩ@1.5V 1V
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SI2393DS-T1-GE3 P-Channel SOT-23 30V 7.5A 22.7mΩ@10V 1V
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AO3415M-6AF P-Channel SOT-23 30V 5A 30mΩ@4.5V 620mV
FOSAN 📄 PDF
HL3407A P-Channel SOT-23 30V 4.1A 40mΩ@10V 1.5V