SI2377EDS-T1-GE3 MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level VISHAY
Vds Max
20V
Id Max
4.4A
Rds(on)
165mΩ@1.5V
Vgs(th)
1V

Quick Reference

The SI2377EDS-T1-GE3 is an P-Channel MOSFET in a SOT-23 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.4A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)4.4AMax current handling
Power Dissipation (Pd)1.8WMax thermal limit
On-Resistance (Rds(on))165mΩ@1.5VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)21nC@8VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
WST2339 P-Channel SOT-23 20V 7.1A 19mΩ@4.5V 1V
Winsok Semicon 📄 PDF
HL3415A P-Channel SOT-23 20V 5.6A 31mΩ@4.5V
41mΩ@2.5V
620mV
DMG2305UX-13 P-Channel SOT-23 20V 5A 40mΩ@4.5V
52mΩ@2.5V
900mV
DIODES 📄 PDF
AO3415A P-Channel SOT-23 20V 5A 41mΩ@4.5V 900mV
HL6042 P-Channel SOT-23 20V 5A 43mΩ@4.5V 900mV
Si2323DDS-T1-GE3 P-Channel SOT-23 20V 5.3A 75mΩ@1.8V 1V
VISHAY 📄 PDF
SI2305M-6AF P-Channel SOT-23 20V 5.5A 75mΩ@1.8V 1V
FOSAN 📄 PDF
SI2393DS-T1-GE3 P-Channel SOT-23 30V 7.5A 22.7mΩ@10V 1V
VISHAY 📄 PDF
AO3415M-6AF P-Channel SOT-23 30V 5A 30mΩ@4.5V 620mV
FOSAN 📄 PDF
HL3401 P-Channel SOT-23 30V 4.4A 45.5mΩ@10V 900mV
AO3401 P-Channel SOT-23 30V 4.4A 52mΩ@4.5V 900mV
FOSAN 📄 PDF
NCE3401AY P-Channel SOT-23 30V 4.4A 80mΩ@2.5V 1.3V
BRCS5P06MA P-Channel SOT-23 60V 5A 103mΩ@4.5V 1.5V
BLUE ROCKET 📄 PDF