NJW1302G Datasheet & Equivalents

PNP TO-3P High Power onsemi
VCEO
250V
Ic Max
15A
Pd Max
200W
hFE Gain
150

Quick Reference

The NJW1302G is a PNP bipolar junction transistor in a TO-3P package, manufactured by onsemi. It supports a breakdown voltage of 250V and continuous collector current of 15A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)250VMax breakdown voltage
Collector Current (Ic)15AMax current handling
Power Dissipation (Pd)200WMax thermal limit
DC Current Gain (hFE)150Base signal amplification ratio
Transition Frequency (fT)30MHzMax operating frequency
Saturation Voltage (VCEsat)600mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current50uALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJW0302A PNP TO-3P 250V 15A 150 150W
NJW0302G PNP TO-3P 250V 15A 150 150W
NJW0302G-JSM PNP TO-3P 250V 15A 160 150W
NJW0302G PNP TO-3P 250V 15A 75 150W
NJW21193G PNP TO-3P 250V 16A 20 200W
2SA1962OTU PNP TO-3P 250V 17A 55 130W
MP1526 PNP TO-3P 260V 15A 140 150W
WGC3320 PNP TO-3P 400V 15A 10 80W
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