2SA1962OTU Datasheet & Equivalents
PNP
TO-3P
High Power
onsemi
VCEO
250V
Ic Max
17A
Pd Max
130W
hFE Gain
55
Quick Reference
The 2SA1962OTU is a PNP bipolar junction transistor in a TO-3P package, manufactured by onsemi. It supports a breakdown voltage of 250V and continuous collector current of 17A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-3P | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 250V | Max breakdown voltage |
| Collector Current (Ic) | 17A | Max current handling |
| Power Dissipation (Pd) | 130W | Max thermal limit |
| DC Current Gain (hFE) | 55 | Base signal amplification ratio |
| Transition Frequency (fT) | 30MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 400mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 5uA | Leakage current when OFF |
| Operating Temp | -50℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||