NJW21193G Datasheet & Equivalents
PNP
TO-3P
High Power
onsemi
VCEO
250V
Ic Max
16A
Pd Max
200W
hFE Gain
20
Quick Reference
The NJW21193G is a PNP bipolar junction transistor in a TO-3P package, manufactured by onsemi. It supports a breakdown voltage of 250V and continuous collector current of 16A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-3P | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 250V | Max breakdown voltage |
| Collector Current (Ic) | 16A | Max current handling |
| Power Dissipation (Pd) | 200W | Max thermal limit |
| DC Current Gain (hFE) | 20 | Base signal amplification ratio |
| Transition Frequency (fT) | 4MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 1.4V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100uA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2SA1962OTU | PNP | TO-3P | 250V | 17A | 55 | 130W | onsemi 📄 PDF |