NJVMJD31T4G Datasheet & Equivalents

NPN TO-252 (DPAK) High Power onsemi
VCEO
40V
Ic Max
3A
Pd Max
15W
hFE Gain
25

Quick Reference

The NJVMJD31T4G is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 40V and continuous collector current of 3A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)3AMax current handling
Power Dissipation (Pd)15WMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)3MHzMax operating frequency
Saturation Voltage (VCEsat)1.2VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current50uALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJD31T4G NPN TO-252 (DPAK) 40V 3A 25 15W
ZXT690BKTC NPN TO-252 (DPAK) 45V 3A 150 4W
2SD1760 NPN TO-252 (DPAK) 50V 3A 82 1.5W
2SD1760Q NPN TO-252 (DPAK) 50V 3A 82 1.5W
2SD1760TLR NPN TO-252 (DPAK) 50V 3A 82 15W
2SD1802(RANGE:100-200) NPN TO-252 (DPAK) 50V 3A 100 1W
2SD1802T-TL-E NPN TO-252 (DPAK) 50V 3A 100 15W
2SD1802T NPN TO-252 (DPAK) 50V 3A 560 1W
2SD1899(RANGE:100-200) NPN TO-252 (DPAK) 60V 3A 100 1W
STD1802T4 NPN TO-252 (DPAK) 60V 3A 200 15W
2SC5103TLQ NPN TO-252 (DPAK) 60V 5A 270 1W
ZXT1053AKQTC NPN TO-252 (DPAK) 75V 5A 300 2.1W
ZXT1053AKTC NPN TO-252 (DPAK) 75V 5A 300 4W
MJD31C-13 NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CG NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CRLG NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CT4G NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CUQ-13 NPN TO-252 (DPAK) 100V 3A 25 1.6W
NJVMJD31CT4G NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31C NPN TO-252 (DPAK) 100V 3A 25 1.25W