STD1802T4 Datasheet & Equivalents

NPN TO-252 (DPAK) High Power ST
VCEO
60V
Ic Max
3A
Pd Max
15W
hFE Gain
200

Quick Reference

The STD1802T4 is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by ST. It supports a breakdown voltage of 60V and continuous collector current of 3A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)3AMax current handling
Power Dissipation (Pd)15WMax thermal limit
DC Current Gain (hFE)200Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD1899(RANGE:100-200) NPN TO-252 (DPAK) 60V 3A 100 1W
2SC5103TLQ NPN TO-252 (DPAK) 60V 5A 270 1W
ZXT1053AKQTC NPN TO-252 (DPAK) 75V 5A 300 2.1W
ZXT1053AKTC NPN TO-252 (DPAK) 75V 5A 300 4W
NSV1C301ET4G NPN TO-252 (DPAK) 100V 3A 200 2.1W
NSS1C301ET4G NPN TO-252 (DPAK) 100V 3A 120 2.1W
2SD1815(RANGE:100-200) NPN TO-252 (DPAK) 100V 3A 100 1W
MJD31C NPN TO-252 (DPAK) 100V 3A 80 1.56W
MJD31C NPN TO-252 (DPAK) 100V 3A 75 1.25W
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2SD1815S-TL-E NPN TO-252 (DPAK) 100V 3A 40 20W
MJD31C-13 NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CG NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CRLG NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CT4G NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CUQ-13 NPN TO-252 (DPAK) 100V 3A 25 1.6W
NJVMJD31CT4G NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31C NPN TO-252 (DPAK) 100V 3A 25 1.25W
MJD31CAJ NPN TO-252 (DPAK) 100V 3A 10 15W
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MJD31CJ NPN TO-252 (DPAK) 100V 3A 10 1.6W
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MJD31CQ NPN TO-252 (DPAK) 100V 3A 10 1.6W