MJD31T4G Datasheet & Equivalents

NPN TO-252 (DPAK) High Power onsemi
VCEO
40V
Ic Max
3A
Pd Max
15W
hFE Gain
25

Quick Reference

The MJD31T4G is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 40V and continuous collector current of 3A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)3AMax current handling
Power Dissipation (Pd)15WMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)3MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
NJVMJD31T4G NPN TO-252 (DPAK) 40V 3A 25 15W
ZXT690BKTC NPN TO-252 (DPAK) 45V 3A 150 4W
2SD1760 NPN TO-252 (DPAK) 50V 3A 82 1.5W
2SD1760Q NPN TO-252 (DPAK) 50V 3A 82 1.5W
2SD1760TLR NPN TO-252 (DPAK) 50V 3A 82 15W
2SD1802(RANGE:100-200) NPN TO-252 (DPAK) 50V 3A 100 1W
2SD1802T-TL-E NPN TO-252 (DPAK) 50V 3A 100 15W
2SD1802T NPN TO-252 (DPAK) 50V 3A 560 1W
2SD1899(RANGE:100-200) NPN TO-252 (DPAK) 60V 3A 100 1W
STD1802T4 NPN TO-252 (DPAK) 60V 3A 200 15W
2SC5103TLQ NPN TO-252 (DPAK) 60V 5A 270 1W
ZXT1053AKQTC NPN TO-252 (DPAK) 75V 5A 300 2.1W
ZXT1053AKTC NPN TO-252 (DPAK) 75V 5A 300 4W
MJD31C-13 NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CG NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CRLG NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CT4G NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31CUQ-13 NPN TO-252 (DPAK) 100V 3A 25 1.6W
NJVMJD31CT4G NPN TO-252 (DPAK) 100V 3A 25 15W
MJD31C NPN TO-252 (DPAK) 100V 3A 25 1.25W