MMST2222A Datasheet & Equivalents

NPN SOT-323 General Purpose MSKSEMI
VCEO
40V
Ic Max
600mA
Pd Max
200mW
hFE Gain
300

Quick Reference

The MMST2222A is a NPN bipolar junction transistor in a SOT-323 package, manufactured by MSKSEMI. It supports a breakdown voltage of 40V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)1.2MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMST2222AQ NPN SOT-323 40V 600mA 300 200mW
MMST4401 NPN SOT-323 40V 600mA 300 200mW
MMST2222A-7-F NPN SOT-323 40V 600mA 100 200mW
MMST2222A-TP NPN SOT-323 40V 600mA 100 200mW
MMST4401-7-F NPN SOT-323 40V 600mA 80 200mW
PMST4401 NPN SOT-323 40V 600mA 80 200mW
Nexperia ๐Ÿ“„ PDF
115 NPN SOT-323 40V 600mA 80 200mW
Nexperia ๐Ÿ“„ PDF
PMST4401 NPN SOT-323 40V 600mA 35 150mW
135 NPN SOT-323 40V 600mA 20 150mW
MMBT2222AWT1G NPN SOT-323 60V 750mA 200 415mW
Nexperia ๐Ÿ“„ PDF
MMBT4401WT1G NPN SOT-323 60V 1A 100 400mW
PBSS4160U NPN SOT-323 60V 1A 100 250mW