MMBT4401WT1G Datasheet & Equivalents

NPN SOT-323 General Purpose onsemi
VCEO
40V
Ic Max
600mA
Pd Max
150mW
hFE Gain
20

Quick Reference

The MMBT4401WT1G is a NPN bipolar junction transistor in a SOT-323 package, manufactured by onsemi. It supports a breakdown voltage of 40V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)150mWMax thermal limit
DC Current Gain (hFE)20Base signal amplification ratio
Transition Frequency (fT)250MHzMax operating frequency
Saturation Voltage (VCEsat)750mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBT2222AWT1G NPN SOT-323 40V 600mA 35 150mW
MMST4401-7-F NPN SOT-323 40V 600mA 80 200mW
PMST4401 NPN SOT-323 40V 600mA 80 200mW
Nexperia ๐Ÿ“„ PDF
115 NPN SOT-323 40V 600mA 80 200mW
Nexperia ๐Ÿ“„ PDF
PMST4401 NPN SOT-323 40V 600mA 100 200mW
135 NPN SOT-323 40V 600mA 100 200mW
MMST2222A-7-F NPN SOT-323 40V 600mA 300 200mW
MMST2222A-TP NPN SOT-323 40V 600mA 300 200mW
MMST2222A NPN SOT-323 40V 600mA 300 200mW
MMST2222AQ NPN SOT-323 60V 750mA 200 415mW
Nexperia ๐Ÿ“„ PDF
MMST4401 NPN SOT-323 60V 1A 100 400mW
PBSS4160U NPN SOT-323 60V 1A 100 250mW