MMDT5551-JSM Transistor Datasheet & Specifications

NPN BJT | JSMSEMI

NPNSOT-363General Purpose
VCEO
160V
Ic Max
200mA
Pd Max
200mW
Gain
300
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The MMDT5551-JSM is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 160V breakdown voltage and 200mA continuous collector current. Download the MMDT5551-JSM datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO160VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain300DC current gain
Frequency300MHzTransition speed
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT5551(RANGE:100-300)NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551DWNPNSOT-363160V200mA200mW
JTDMMDT5551NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMBT5551DWNPNSOT-363160V600mA500mW
MMDT5551NPNSOT-363160V200mA200mW
View all SOT-363 NPN Transistors ›