MMBT5551DW Transistor Datasheet & Specifications

NPN BJT | Shikues

NPNSOT-363General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
500mW
Gain
300
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Quick Reference

The MMBT5551DW is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMBT5551DW datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max500mWPower dissipation
Gain300DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo110MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT5551(RANGE:100-300)NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551DWNPNSOT-363160V200mA200mW
JTDMMDT5551NPNSOT-363160V200mA200mW
MMDT5551-JSMNPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
View all SOT-363 NPN Transistors ›