JTDMMDT5551 Transistor Datasheet & Specifications

NPN BJT | JTD

NPNSOT-363General Purpose
VCEO
160V
Ic Max
200mA
Pd Max
200mW
Gain
300
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Quick Reference

The JTDMMDT5551 is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 160V breakdown voltage and 200mA continuous collector current. Download the JTDMMDT5551 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJTDOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO160VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain300DC current gain
Frequency300MHzTransition speed
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMDT5551(RANGE:100-300)NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551DWNPNSOT-363160V200mA200mW
MMDT5551-JSMNPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMDT5551NPNSOT-363160V200mA200mW
MMBT5551DWNPNSOT-363160V600mA500mW
MMDT5551NPNSOT-363160V200mA200mW
View all SOT-363 NPN Transistors ›