MMDT3904DW Datasheet & Equivalents

NPN SOT-363 General Purpose Huixin
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300

Quick Reference

The MMDT3904DW is a NPN bipolar junction transistor in a SOT-363 package, manufactured by Huixin. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHuixinOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)300mV@50mA,5mAVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MBT3904DW1T1G-CN NPN SOT-363 40V 200mA 300 200mW
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MMDT3904 NPN SOT-363 40V 200mA 300 200mW
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MMDT3904 NPN SOT-363 40V 200mA 300 200mW
LMBT3904DW1T1G NPN SOT-363 40V 200mA 100 150mW
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MMDT3904 NPN SOT-363 40V 200mA 100 200mW
HMMDT39047F NPN SOT-363 40V 200mA 70 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT3904 NPN SOT-363 40V 200mA 40 200mW
MMDT3904 NPN SOT-363 40V 200mA 40 200mW