MMDT3904 Datasheet & Equivalents
NPN
SOT-363
General Purpose
YANGJIE
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
100
Quick Reference
The MMDT3904 is a NPN bipolar junction transistor in a SOT-363 package, manufactured by YANGJIE. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 300MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| LMBT3904DW1T1G | NPN | SOT-363 | 40V | 200mA | 100 | 150mW | LRC 📄 PDF |
| HMMDT39047F | NPN | SOT-363 | 40V | 200mA | 70 | 200mW | HXY MOSFET 📄 PDF |
| MBT3904DW1T1G-CN | NPN | SOT-363 | 40V | 200mA | 300 | 200mW | ChipNobo 📄 PDF |
| MBT3904DW1T1G-HXY | NPN | SOT-363 | 40V | 200mA | 300 | 200mW | HXY MOSFET 📄 PDF |
| MMDT3904DW | NPN | SOT-363 | 40V | 200mA | 300 | 200mW | Huixin 📄 PDF |