HMMDT39047F Datasheet & Equivalents

NPN SOT-363 General Purpose HXY MOSFET
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
70

Quick Reference

The HMMDT39047F is a NPN bipolar junction transistor in a SOT-363 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)70Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
LMBT3904DW1T1G NPN SOT-363 40V 200mA 100 150mW
MMDT3904 NPN SOT-363 40V 200mA 40 200mW
MMDT3904 NPN SOT-363 40V 200mA 40 200mW
MMDT3904 NPN SOT-363 40V 200mA 100 200mW
MMDT3904 NPN SOT-363 40V 200mA 100 200mW
MBT3904DW1T1G-CN NPN SOT-363 40V 200mA 300 200mW
ChipNobo ๐Ÿ“„ PDF
MBT3904DW1T1G-HXY NPN SOT-363 40V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT3904DW NPN SOT-363 40V 200mA 300 200mW
MMDT3904 NPN SOT-363 40V 200mA 300 200mW
MDD(Microdiod... ๐Ÿ“„ PDF
MMDT3904 NPN SOT-363 40V 200mA 300 200mW
YONGYUTAI ๐Ÿ“„ PDF
MMDT3904 NPN SOT-363 40V 200mA 300 200mW
HXY MOSFET ๐Ÿ“„ PDF
MMDT3904 NPN SOT-363 40V 200mA 300 200mW
HT(Shenzhen J... ๐Ÿ“„ PDF
MMDT3904 NPN SOT-363 40V 200mA 300 200mW