MMBTA13-TP Datasheet & Equivalents

NPN SOT-23 General Purpose MCC
VCEO
30V
Ic Max
300mA
Pd Max
225mW
hFE Gain
10000

Quick Reference

The MMBTA13-TP is a NPN bipolar junction transistor in a SOT-23 package, manufactured by MCC. It supports a breakdown voltage of 30V and continuous collector current of 300mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMCCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)30VMax breakdown voltage
Collector Current (Ic)300mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)10000Base signal amplification ratio
Transition Frequency (fT)125MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒ@(Tj)Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTA13LT3G NPN SOT-23 30V 300mA 10000 225mW
SSTA13T116 NPN SOT-23 30V 300mA 10000 200mW
MMBTA13 NPN SOT-23 30V 300mA 10000 300mW
MMBTA14LT1G NPN SOT-23 30V 300mA 20000 225mW
MMBTA13 NPN SOT-23 30V 300mA - 300mW
GOODWORK
MMBTA14 NPN SOT-23 30V 300mA 20000 300mW
MMBTA14 NPN SOT-23 30V 300mA 20000 300mW
MMBTA14 NPN SOT-23 30V 300mA 20000 300mW
PMBTA13 NPN SOT-23 30V 500mA 10000 250mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 30V 500mA 300 300mW
S9013 NPN SOT-23 30V 500mA 100 200mW
ST(Semtech) ๐Ÿ“„ PDF
MMBT9013G NPN SOT-23 30V 500mA 96 350mW
KTC9013S-H-RTK/P NPN SOT-23 30V 500mA 20000 300mW
BCV27 NPN SOT-23 30V 600mA 35 300mW
MMBT2222LT1G NPN SOT-23 32V 300mA 5000 200mW
2SD1383KT146B NPN SOT-23 32V 500mA 82 200mW
2SC2411 NPN SOT-23 32V 500mA 82 200mW
2SC2411KT146Q NPN SOT-23 32V 500mA 82 200mW
2SC2411KT146R NPN SOT-23 40V 500mA 100 300mW
MMBTA05 NPN SOT-23 40V 500mA 40 225mW