MMBTA13 Datasheet & Equivalents

NPN SOT-23 General Purpose R+O
VCEO
30V
Ic Max
300mA
Pd Max
300mW
hFE Gain
10000

Quick Reference

The MMBTA13 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by R+O. It supports a breakdown voltage of 30V and continuous collector current of 300mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)30VMax breakdown voltage
Collector Current (Ic)300mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)10000Base signal amplification ratio
Transition Frequency (fT)125MHzMax operating frequency
Saturation Voltage (VCEsat)1.5VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTA13-TP NPN SOT-23 30V 300mA 10000 225mW
MMBTA13LT3G NPN SOT-23 30V 300mA 10000 225mW
SSTA13T116 NPN SOT-23 30V 300mA 10000 200mW
MMBTA14LT1G NPN SOT-23 30V 300mA 20000 225mW
MMBTA14 NPN SOT-23 30V 300mA 20000 300mW
MMBTA14 NPN SOT-23 30V 300mA 20000 300mW
MMBTA14 NPN SOT-23 30V 300mA 20000 300mW
PMBTA13 NPN SOT-23 30V 500mA 10000 250mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 30V 500mA 300 300mW
S9013 NPN SOT-23 30V 500mA 100 200mW
ST(Semtech) ๐Ÿ“„ PDF
MMBT9013G NPN SOT-23 30V 500mA 96 350mW
KTC9013S-H-RTK/P NPN SOT-23 30V 500mA 20000 300mW
BCV27 NPN SOT-23 30V 600mA 35 300mW
MMBT2222LT1G NPN SOT-23 32V 300mA 5000 200mW
2SD1383KT146B NPN SOT-23 32V 500mA 82 200mW
2SC2411 NPN SOT-23 32V 500mA 82 200mW
2SC2411KT146Q NPN SOT-23 32V 500mA 82 200mW
2SC2411KT146R NPN SOT-23 40V 500mA 100 300mW
MMBTA05 NPN SOT-23 40V 500mA 40 225mW
S8050-H NPN SOT-23 40V 500mA 20000 300mW