MJE243G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-225-3General Purpose
VCEO
100V
Ic Max
4A
Pd Max
15W
Gain
40

Quick Reference

The MJE243G is a NPN bipolar transistor in a TO-225-3 package. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the MJE243G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting
VCEO100VBreakdown voltage
IC Max4ACollector current
Pd Max15WPower dissipation
Gain40DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo40MHzEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BD139GNPNTO-225-380V1.5A12.5W
BD681GNPNTO-225-3100V4A40W
MJE182GNPNTO-225-3100V3A12.5W