BD681G Transistor Datasheet & Specifications
NPNTO-225-3General Purpose
VCEO
100V
Ic Max
4A
Pd Max
40W
Gain
750
Quick Reference
The BD681G is a NPN bipolar transistor in a TO-225-3 package. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the BD681G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-225-3 | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 4A | Collector current |
| Pd Max | 40W | Power dissipation |
| Gain | 750 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | 2.5V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Temp | -55℃~+150℃@(Tj) | Operating temp |