BD139G Transistor Datasheet & Specifications
NPNTO-225-3General Purpose
VCEO
80V
Ic Max
1.5A
Pd Max
12.5W
Gain
25
Quick Reference
The BD139G is a NPN bipolar transistor in a TO-225-3 package. This datasheet provides complete specifications including 80V breakdown voltage and 1.5A continuous collector current. Download the BD139G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-225-3 | Physical mounting |
| VCEO | 80V | Breakdown voltage |
| IC Max | 1.5A | Collector current |
| Pd Max | 12.5W | Power dissipation |
| Gain | 25 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |