MJD44H11T4G-DW Datasheet & Equivalents

NPN TO-252 (DPAK) High Power DOWO
VCEO
80V
Ic Max
8A
Pd Max
20W
hFE Gain
60

Quick Reference

The MJD44H11T4G-DW is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by DOWO. It supports a breakdown voltage of 80V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDOWOOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)80VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)20WMax thermal limit
DC Current Gain (hFE)60Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current10uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJD44H11A NPN TO-252 (DPAK) 80V 8A 60 20W
Nexperia ๐Ÿ“„ PDF
MJD44H11J NPN TO-252 (DPAK) 80V 8A 60 20W
Nexperia ๐Ÿ“„ PDF
MJD44H11 NPN TO-252 (DPAK) 80V 8A 60 1.75W
GOODWORK ๐Ÿ“„ PDF
MJD44H11 NPN TO-252 (DPAK) 80V 8A 60 20W
MJD44H11T4G NPN TO-252 (DPAK) 80V 8A 60 50W
MJD44H11T4G NPN TO-252 (DPAK) 80V 8A 60 20W
MJD44H11T4 NPN TO-252 (DPAK) 80V 8A 40 20W
NJVMJD44H11T4G NPN TO-252 (DPAK) 80V 8A 40 20W
MJD122 NPN TO-252 (DPAK) 100V 8A - 1.75W
GOODWORK ๐Ÿ“„ PDF
MJD122-TP NPN TO-252 (DPAK) 100V 8A 1000 1.5W
MJD122T4 NPN TO-252 (DPAK) 100V 8A 1000 20W
MJD122T4G NPN TO-252 (DPAK) 100V 8A 1000 1.75W
NJVMJD122T4G NPN TO-252 (DPAK) 100V 8A 1000 1.75W
MJD122 NPN TO-252 (DPAK) 100V 8A 12000 1.5W
MJD41C(MS) NPN TO-252 (DPAK) 100V 9A 75 1.25W
MJD41C NPN TO-252 (DPAK) 100V 9A 30 1.25W
BTC1510F3L-TN3-R NPN TO-252 (DPAK) 150V 10A 20 1.1W