MJD44H11T4 Datasheet & Equivalents

NPN TO-252 (DPAK) High Power ST
VCEO
80V
Ic Max
8A
Pd Max
20W
hFE Gain
40

Quick Reference

The MJD44H11T4 is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by ST. It supports a breakdown voltage of 80V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)80VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)20WMax thermal limit
DC Current Gain (hFE)40Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current10uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
NJVMJD44H11T4G NPN TO-252 (DPAK) 80V 8A 40 20W
MJD44H11A NPN TO-252 (DPAK) 80V 8A 60 20W
Nexperia ๐Ÿ“„ PDF
MJD44H11J NPN TO-252 (DPAK) 80V 8A 60 20W
Nexperia ๐Ÿ“„ PDF
MJD44H11T4G-DW NPN TO-252 (DPAK) 80V 8A 60 20W
MJD44H11 NPN TO-252 (DPAK) 80V 8A 60 1.75W
GOODWORK ๐Ÿ“„ PDF
MJD44H11 NPN TO-252 (DPAK) 80V 8A 60 20W
MJD44H11T4G NPN TO-252 (DPAK) 80V 8A 60 50W
MJD44H11T4G NPN TO-252 (DPAK) 80V 8A 60 20W
MJD122 NPN TO-252 (DPAK) 100V 8A - 1.75W
GOODWORK ๐Ÿ“„ PDF
MJD122-TP NPN TO-252 (DPAK) 100V 8A 1000 1.5W
MJD122T4 NPN TO-252 (DPAK) 100V 8A 1000 20W
MJD122T4G NPN TO-252 (DPAK) 100V 8A 1000 1.75W
NJVMJD122T4G NPN TO-252 (DPAK) 100V 8A 1000 1.75W
MJD122 NPN TO-252 (DPAK) 100V 8A 12000 1.5W
MJD41C NPN TO-252 (DPAK) 100V 9A 30 1.25W
MJD41C(MS) NPN TO-252 (DPAK) 100V 9A 75 1.25W
BTC1510F3L-TN3-R NPN TO-252 (DPAK) 150V 10A 20 1.1W